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EMY1 / UMY1N / FMY1A
Transistors
Emitter common (dual transistors)
EMY1 / UMY1N / FMY1A
!Features 1) Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. 2) PNP and NPN transistors have common emitters. 3) Mounting cost and area can be cut in half. !External dimensions (Units : mm)
EMY1
0.22
(4) (3) (2) (5)
0.13
1.2 1.6
(1)
!Structure Epitaxial planar type PNP / NPN silicon transistor
Each lead has same dimensions
ROHM : EMT5 Abbreviated symbol : Y1
UMY1N
(4) (3)
(6)
EMY1 / UMY1N
(3) Tr2 (4) (2) (1) Tr1 (5)/(6)
FMY1A
0.15
1.25 2.1
0.7 0.9 1.1 2.9
(3) Tr2 (2)
(4)
0.1Min.
0~0.1
(5) R1 Tr1 (1)
Each lead has same dimensions
ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : Y1
FMY1A
0.95 0.95 1.9 0.3
(2) (3)
!Absolute maximum ratings (Ta = 25C)
Limits Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current EMY1, UMY1N Power dissipation FMY1A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Tr1 -60 -50 -6 -150 Tr2 60 50 7 150 Unit
(1)
1.6
0.15
V V V mA mW C C
2.8
0.8
0.3to0.6
0to0.1
Each lead has same dimensions
150 (TOTAL) 1 300 (TOTAL) 2 150 -55+150
ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : Y1

1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
(5)
(4)
(1)
!Equivalent circuit
0.65 0.65
0.5 1.3 2.0
(2)
0.2
0.5 0.5 1.0 1.6
EMY1 / UMY1N / FMY1A
Transistors
!Electrical characteristics (Ta = 25C) Tr1 (PNP)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob -60 -50 -6 - - - 120 - - - - - - - - - 140 4 - - - -0.1 -0.1 -0.5 560 - 5 V V V A A V - IC=-50A IC=-1mA IE=-50A VCB=-60V VEB=-6V IC/IB=-50mA/-5mA VCE=-6V, IC=-1mA Conditions
MHz VCE=-12V, IE=2mA, f=100MHz PF VCB=-12V, IE=0A, f=1MHz
Tr2 (NPN)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob 60 50 7 - - - 120 - - - - - - - - - 180 2 - - - 0.1 0.1 0.4 560 - 3.5 V V V A A V - IC=50A IC=1mA IE=50A VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA Conditions
MHz VCE=12V, IE=-2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz
!Packaging specifications
Packaging type Code Type EMY1 UMY1N FMY1 Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000
!Electrical characteristic curves Tr1 (PNP)
-50
COLLECTOR CURRENT : Ic (mA)
COLLECTOR CURRENT : IC (mA)
-10 -5 -2 -1 -0.5 -0.2 -0.1
-40C
-8
-28.0 -24.5
COLLECTOR CURRENT : IC (mA)
-20
Ta=100C 25C
VCE=-6V
-10
-35.0 Ta=25C -31.5
-100
Ta=25C -500 -450 -400 -350 -300
-80
-6
-21.0 -17.5
-60
-250 -200
-4
-14.0 -10.5
-40
-150 -100
-2
-7.0 -3.5A IB=0
-20
-50A IB=0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-1
-2
-3
-4
-5
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics ( I )
Fig.3 Grounded emitter output characteristics ( II )
EMY1 / UMY1N / FMY1A
Transistors
Ta=25C VCE=-5V -3V -1V
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
500
500
-1
Ta=100C 25C
DC CURRENT GAIN : hFE
200
Ta=25C
DC CURRENT GAIN : hFE
-0.5
200
-40C
-0.2
100
100
IC/IB=50
-0.1
20 10
50
50
-0.05
-0.2
-0.5 -1
-2
-5
-10 -20
-50 -100
VCE=-6V
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
-0.2
-0.5 -1
-2
-5
-10 -20
-50 -100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( I )
Fig.5 DC current gain vs. collector current ( II )
Fig.6 Collector-emitter saturation voltage vs. collector current ( I )
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
-1
lC/lB=10
1000
20
-0.5
TRANSITION FREQUENCY : fT (MHz)
Ta=25C VCE=-12V
Cib
10
500
Ta=25C f=1MHz IE=0A IC=0A
Co b
-0.2
200
5
-0.1
Ta=100C 25C -40C
100
2
-0.05
50 0.5 1 2 5 10 20 50 100
-0.2
-0.5 -1
-2
-5
-10 -20
-50 -100
-0.5
-1
-2
-5
-10
-20
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation voltage vs. collector current ( II )
Fig.8 Gain bandwidth product vs. emitter current
Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Tr2 (NPN)
50
VCE=6V
100
COLLECTOR CURRENT : IC (mA)
Ta=25C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
20 10 5
80
0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 0.25mA
10
Ta=25C
30A 27A
8
24A 21A
Ta=100C
25C -55C
60
0.20mA 0.15mA
6
18A 15A
2 1 0.5 0.2 0.1 0 0.2
40
0.10mA
4
12A 9A
20
0.05mA IB=0A
2
6A 3A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0 0
IB=0A 4 8 12 16 20
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Grounded emitter propagation characteristics
Fig.11 Grounded emitter output characteristics ( I )
Fig.12 Grounded emitter output characteristics ( II )
EMY1 / UMY1N / FMY1A
Transistors
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
500
500
Ta=25C
DC CURRENT GAIN : hFE
Ta=100C
VCE=5V 3V 1V
200
VCE=5V
0.5
Ta=25C
DC CURRENT GAIN : hFE
200
25C -55C
0.2
100
100
0.1 0.05
IC/IB=50 20 10
50
50
0.02
20
20
10 0.2
0.5
1
2
5
10 20
50 100 200
10 0.2
0.5
1
2
5
10 20
50 100 200
0.01 0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.13 DC current gain vs. collector current ( I )
Fig.14 DC current gain vs. collector current ( II )
Fig.15 Collector-emitter saturation voltage vs. collector current ( I )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
0.5
IC/IB=10
0.5
IC/IB=50
TRANSITION FREQUENCY : fT (MHz)
500
Ta=25C VCE=6V
0.2
0.2 0.1 0.05
0.1 0.05
Ta=100C 25C -55C
Ta=100C 25C -55C
200
0.02
100
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100
0.01 0.2 0.5 1 2 5 10 20 50 100 200
50 -0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.16 Collector-emitter saturation voltage vs. collector current ( II )
Fig.17 Collector-emitter saturation voltage vs. collector current ( III )
Fig.18 Gain bandwidth product vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)
20
10
Cib
Ta=25C f=1MHz IE=0A IC=0A
200
Ta=25C f=32MHZ VCB=6V
100
5
50
2
Co
20
b
1 0.2 0.5 1 2 5 10 20 50
10 -0.2 -0.5 -1 -2 -5 -10
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Fig.20 Base-collector time constant vs. emitter current
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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